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| SEMICONDUCTOR TECHNICAL DATA General Description KHB9D5N20P1/F1/F2 N CHANNEL MOS FIELD EFFECT TRANSISTOR KHB9D5N20P1 A O C F E G B Q I K M L J D N N H P DIM MILLIMETERS _ 9.9 + 0.2 A B C D E F G H I J K L M N O 1 2 3 This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switch mode power supplies. FEATURES VDSS=200V, ID=9.5A Drain-Source ON Resistance : RDS(ON)=400m Qg(typ.)=18.5nC @VGS = 10V 15.95 MAX 1.3+0.1/-0.05 _ 0.8 + 0.1 _ 3.6 + 0.2 _ 2.8 + 0.1 3.7 0.5+0.1/-0.05 1.5 _ 13.08 + 0.3 1.46 _ 1.4 + 0.1 _ 1.27 + 0.1 _ 2.54 + 0.2 _ 0.2 4.5 + _ 2.4 + 0.2 _ 9.2 + 0.2 1. GATE 2. DRAIN 3. SOURCE P Q TO-220AB MAXIMUM RATING (Tc=25 ) RATING A F KHB9D5N20F1 C CHARACTERISTIC SYMBOL KHB9D5N20F1 UNIT KHB9D5N20P1 KHB9D5N20F2 E O DIM B MILLIMETERS Drain-Source Voltage Gate-Source Voltage Drain Current @TC=25 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Drain Power Dissipation Tc=25 Derate above25 VDSS VGSS ID IDP EAS EAR dv/dt 87 PD 0.7 Tj Tstg 9.5 38 200 30 9.5* V V A 38* K L M J R 180 8.7 5.5 40 0.32 150 -55 150 mJ mJ Q D N N H V/ns W W/ 1 2 3 A B C D E F G H J K L M N O Q R _ 10.16 + 0.2 _ 15.87 + 0.2 _ 2.54 + 0.2 _ 0.8 + 0.1 _ 3.18 + 0.1 _ 3.3 + 0.1 _ 0.2 12.57 + _ 0.5 + 0.1 13.0 MAX _ 3.23 + 0.1 1.47 MAX 1.47 MAX _ 2.54 + 0.2 _ 6.68 + 0.2 _ 4.7 + 0.2 _ 2.76 + 0.2 G 1. GATE 2. DRAIN 3. SOURCE TO-220IS (1) KHB9D5N20F2 A F C Maximum Junction Temperature Storage Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-toAmbient S P RthJA 62.5 62.5 /W K L L R G B RthJC 1.44 3.13 /W E DIM MILLIMETERS PIN CONNECTION D M D D N N H G 1 2 3 A B C D E F G H J K L M N P Q R S _ 10.0 + 0.3 _ 15.0 + 0.3 _ 2.70 + 0.3 0.76+0.09/-0.05 _ 3.2 +0.2 _ 3.0 + 0.3 _ 12.0 + 0.3 0.5+0.1/-0.05 _ 13.6 + 0.5 _ 3.7 + 0.2 1.2+0.25/-0.1 1.5+0.25/-0.1 _ 2.54 +0.1 _ 6.8 + 0.1 _ 4.5 + 0.2 _ 2.6 + 0.2 0.5 Typ Q J 1. GATE 2. DRAIN 3. SOURCE S TO-220IS 2007. 5. 10 Revision No : 0 1/7 KHB9D5N20P1/F1/F2 ELECTRICAL CHARACTERISTICS (Tc=25 CHARACTERISTIC ) TEST CONDITION MIN. TYP. MAX. UNIT SYMBOL Static Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Gate Threshold Voltage Drain Cut-off Current Gate Leakage Current Drain-Source ON Resistance Forward Transconductance BVDSS BVDSS/ Tj Vth IDSS IGSS RDS(ON) gFS ID=250 A, VGS=0V ID=250 A, Referenced to 25 VDS=VGS, ID=250 A VDS=200V, VGS=0V, VGS= 30V, VDS=0V VGS=10V, ID=4.75A VDS=40V, ID=4.75A (Note4) 200 2.0 0.19 345 6.7 4.0 1 100 400 V V/ V A nA m S Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-on Delay time Turn-on Rise time Turn-off Delay time Turn-off Fall time Input Capacitance Output Capacitance Reverse Transfer Capacitance Source-Drain Diode Ratings Continuous Source Current Pulsed Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge IS VGS Note 5) Essentially independent of operating temperature. 2007. 5. 10 Revision No : 0 2/7 KHB9D5N20P1/F1/F2 Fig1. ID - VDS VGS TOP : 15.0 V 10.0 V 8.0 V 1 10 7.0 V 6.5 V 6.0 V 5.5 V Bottom : 5.0 V Fig2. ID - VGS VDS = 40V 250s Pulse Test Drain Current ID (A) Drain Current ID (A) 10 1 10 0 150 C 10 0 25 C -55 C 10 -1 10 -1 10 0 10 1 10 -1 2 4 6 8 10 Drain - Source Voltage VDS (V) Gate - Source Voltage VGS (V) Fig4. BVDSS - Tj Normalized Breakdown Voltage BVDSS 1.2 Fig5. RDS(ON) - ID 2.0 On - Resistance RDS(ON) () VGS = 0V IDS = 250A 1.1 1.5 1.0 1.0 VGS = 10V 0.9 0.5 VGS = 20V 0.8 -100 0 -50 0 50 100 150 0 5 10 15 20 25 30 Junction Temperature Tj ( C) Drain Current ID (A) Fig6. IS - VSD 3.0 Fig6. RDS(ON) - Tj VGS = 10V IDS = 5A Reverse Drain Current IS (A) 10 1 Normalized On Resistance 0.8 1.0 1.2 1.4 1.6 1.8 2.5 2.0 1.5 1.0 0.5 10 0 150 C 25 C 10 -1 0.2 0.4 0.6 0.0 -100 -50 0 50 100 150 Source - Drain Voltage VSD (V) Junction Temperature Tj ( C) 2007. 5. 10 Revision No : 0 3/7 KHB9D5N20P1/F1/F2 Fig7. C - VDS 2500 Frequency =1MHz Fig8. Qg- VGS 12 I = 9.5A D Gate - Source Voltage VGS (V) 2000 10 8 6 4 2 0 0 5 Capacitance (pF) Ciss VDS = 50V VDS = 125V VDS = 200V 1500 Coss Crss 1000 500 0 10-1 100 101 10 15 20 Drain - Source Voltage VDS (V) Gate - Charge Qg (nC) Fig9. Safe Operation Area (KHB9D5N20P1) 102 Operation in this area is limited by RDS(ON) Fig10. Safe Operation Area (KHB9D5N20F1, KHB9D5N20F2) 102 Operation in this area is limited by RDS(ON) Drain Current ID (A) Drain Current ID (A) 101 100s 101 100 s 1 ms 1ms 100 TC= 25 C Tj = 150 C Single nonrepetitive pulse 10ms 100ms DC 10 0 10 ms 100 ms DC 10-1 100 101 102 10 TC= 25 C Tj = 150 C -1 Single nonrepetitive pulse 100 101 102 Drain - Source Voltage VDS (V) Drain - Source Voltage VDS (V) Fig11. ID - Tj 12 10 Drain Current ID (A) 8 6 4 2 0 25 50 75 100 125 150 Junction Temperature Tj ( C ) 2007. 5. 10 Revision No : 0 4/7 KHB9D5N20P1/F1/F2 Fig12. Transient Thermal Response Curve Normalized Transient Thermal Resistance 100 Duty=0.5 0.2 10-1 PDM 0.1 0.05 t1 t2 0.02 0.01 Single Pulse - Duty Factor, D= t1/t2 10-3 10-2 10-1 100 101 10-2 10-5 10-4 TIME (sec) Fig13. Transient Thermal Response Curve Normalized Transient Thermal Resistance 100 Duty=0.5 0.2 0.1 10-1 PDM t1 t2 Single Pulse 0.05 0.02 0.01 - Duty Factor, D= t1/t2 10-3 10-2 10-1 100 101 10-2 10-5 10-4 TIME (sec) 2007. 5. 10 Revision No : 0 5/7 KHB9D5N20P1/F1/F2 Fig14. Gate Charge VGS 10 V ID Fast Recovery Diode 0.8 VDSS 1.0 mA ID VDS Qgs VGS Qgd Qg Q Fig15. Single Pulsed Avalanche Energy EAS= 1 LIAS2 2 BVDSS BVDSS - VDD BVDSS L IAS 0.5 VDSS 25 VDS ID(t) VDD 10 V VGS VDS(t) Time tp 2007. 5. 10 Revision No : 0 6/7 KHB9D5N20P1/F1/F2 Fig16. Resistive Load Switching VDS RL 0.5 VDSS 25 VGS 10% tf 10V td(on) VGS ton tr td(off) toff 90% VDS Fig17. Source - Drain Diode Reverse Recovery and dv /dt Body Diode Forword Current DUT VDS IF ISD (DUT) IRM di/dt 0.8 x VDSS driver IS VDS (DUT) Body Diode Reverse Current Body Diode Recovery dv/dt VSD 10V VGS Body Diode Forword Voltage drop VDD 2007. 5. 10 Revision No : 0 7/7 |
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